Infineon HEXFET N-Channel MOSFET, 71 A, 60 V, 3-Pin DPAK IRFR7546TRPBF
- RS Stock No.:
- 130-0990
- Mfr. Part No.:
- IRFR7546TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£5.53
(exc. VAT)
£6.64
(inc. VAT)
FREE delivery for orders over £50.00
- 10,510 unit(s) ready to ship
| Units | Per unit | Per Pack* | 
|---|---|---|
| 10 + | £0.553 | £5.53 | 
*price indicative
- RS Stock No.:
- 130-0990
- Mfr. Part No.:
- IRFR7546TRPBF
- Brand:
- Infineon
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 71 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 7.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 99 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 58 nC @ 20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 2.39mm | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Height | 6.22mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
| Brand Infineon | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 71 A | ||
| Maximum Drain Source Voltage 60 V | ||
| Series HEXFET | ||
| Package Type DPAK (TO-252) | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 7.9 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 3.7V | ||
| Minimum Gate Threshold Voltage 2.1V | ||
| Maximum Power Dissipation 99 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage -20 V, +20 V | ||
| Typical Gate Charge @ Vgs 58 nC @ 20 V | ||
| Maximum Operating Temperature +175 °C | ||
| Width 2.39mm | ||
| Length 6.73mm | ||
| Number of Elements per Chip 1 | ||
| Height 6.22mm | ||
| Minimum Operating Temperature -55 °C | ||
| Forward Diode Voltage 1.2V | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon HEXFET Series MOSFET, 71A Maximum Continuous Drain Current, 99W Maximum Power Dissipation - IRFR7546TRPBF
Features & Benefits
• Rated for a maximum drain-source voltage of 60V
• Low on-resistance enhances efficiency in power delivery
• DPAK package designed for ease of surface mounting
• High power dissipation capability improves thermal management
• Enhancement mode operation optimises switching performance
Applications
• Useful in battery-powered circuit designs
• Employed in half-bridge and full-bridge topologies
• Effective in synchronous rectifier
• Applied in DC/DC and AC/DC power conversion systems
What is the thermal specification for continuous operation?
How does it perform in high-temperature environments?
What mounting options are available for installation?
Is there a limitation on the gate voltage?
Related links
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRFR7546TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin IPAK IRFU7546PBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK AUIRFR3806TRL
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRLR3636TRPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRFS3306PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR120NTRLPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRFR3709ZTRPBF


