Infineon HEXFET N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF
- RS Stock No.:
- 145-8642
- Mfr. Part No.:
- IRFU4510PBF
- Brand:
- Infineon
Discontinued
- RS Stock No.:
- 145-8642
- Mfr. Part No.:
- IRFU4510PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 143 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 54 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 2.39mm | |
| Length | 6.73mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.22mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 143 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 54 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 2.39mm | ||
Length 6.73mm | ||
Minimum Operating Temperature -55 °C | ||
Height 6.22mm | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRFU4510PBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 100 V, 3-Pin IPAK IRFU4510PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR3710ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin IPAK IRLU8743PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin IPAK IRFU7546PBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin IPAK IRLU024NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRFU120NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRLU3110ZPBF