Infineon HEXFET N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF

Subtotal (1 tube of 75 units)*

£94.35

(exc. VAT)

£113.25

(inc. VAT)

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Units
Per unit
Per Tube*
75 +£1.258£94.35

*price indicative

RS Stock No.:
145-8642
Mfr. Part No.:
IRFU4510PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

100 V

Package Type

IPAK (TO-251)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

13.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

143 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

54 nC @ 10 V

Length

6.73mm

Width

2.39mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

6.22mm

Minimum Operating Temperature

-55 °C

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