Infineon HEXFET N-Channel MOSFET, 63 A, 100 V, 3-Pin IPAK IRLU3110ZPBF
- RS Stock No.:
- 913-3976
- Mfr. Part No.:
- IRLU3110ZPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 913-3976
- Mfr. Part No.:
- IRLU3110ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 63 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | IPAK (TO-251) | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 14 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 140 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Transistor Material | Si | |
Width | 2.3mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 34 nC @ 4.5 V | |
Length | 6.6mm | |
Number of Elements per Chip | 1 | |
Height | 6.1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type IPAK (TO-251) | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 14 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 140 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Width 2.3mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 34 nC @ 4.5 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Height 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 63A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLU3110ZPBF
This high-performance MOSFET is designed for industrial applications, showcasing impressive capabilities for automation and electrical systems. Its enhancement mode transistor structure enhances efficiency and utilises modern processing techniques to deliver effective results. The specifications make it essential for users seeking reliable performance in varied environments.
Features & Benefits
• Ultra low RDS(on) for improved energy efficiency
• Supports high continuous drain current up to 63A
• Maximum drain-source voltage rated at 100V
• Exceptional thermal stability with a maximum operating temperature of +175°C
• Fast switching speeds enhance system responsiveness
• Resistant to repetitive avalanche conditions for further reliability
• Supports high continuous drain current up to 63A
• Maximum drain-source voltage rated at 100V
• Exceptional thermal stability with a maximum operating temperature of +175°C
• Fast switching speeds enhance system responsiveness
• Resistant to repetitive avalanche conditions for further reliability
Applications
• Utilised in power electronic converters
• Suitable for motor control systems
• Ideal for switching regulators and inverters
• Employed in circuits requiring high current handling
• Utilised in power management systems within industrial equipment
• Suitable for motor control systems
• Ideal for switching regulators and inverters
• Employed in circuits requiring high current handling
• Utilised in power management systems within industrial equipment
What are the ideal operating conditions for this MOSFET?
It operates efficiently between -55°C and +175°C, providing versatility in extreme conditions.
How does the RDS(on) impact efficiency?
The ultra low RDS(on) reduces power loss during operation, leading to decreased heat generation and enhanced circuit efficiency.
Can it be used in high-frequency applications?
Yes, the fast switching capabilities allow for use in high-frequency environments while maintaining performance.
What is the significance of the peak gate-source voltage?
The maximum gate-source voltage of ±16V ensures safe operation and prevents breakdown in gate oxide, protecting the transistor's integrity.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRLU3110ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRFU4510PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin IPAK IRFU120NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRFR4510TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRLR3110ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin IPAK IRLU8743PBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin IPAK IRFU7546PBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin IPAK IRLU024NPBF