Infineon HEXFET N-Channel MOSFET, 160 A, 60 V, 3-Pin DPAK IRFS3306PBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

230 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

85 nC @ 10 V

Number of Elements per Chip

1

Width

9.65mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

4.06mm

Height

14.61mm

Minimum Operating Temperature

-55 °C