Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK IPB081N06L3GATMA1
- RS Stock No.:
- 826-9525
- Mfr. Part No.:
- IPB081N06L3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 25 units)*
£27.00
(exc. VAT)
£32.50
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 275 unit(s) shipping from 27 October 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | £1.08 | £27.00 |
| 100 - 225 | £0.833 | £20.83 |
| 250 - 475 | £0.79 | £19.75 |
| 500 - 975 | £0.731 | £18.28 |
| 1000 + | £0.585 | £14.63 |
*price indicative
- RS Stock No.:
- 826-9525
- Mfr. Part No.:
- IPB081N06L3GATMA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ 3 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.31mm | |
| Typical Gate Charge @ Vgs | 22 nC @ 4.5 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.57mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.31mm | ||
Typical Gate Charge @ Vgs 22 nC @ 4.5 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Height 4.57mm | ||
RoHS Status: Not Applicable
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
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