Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 8-Pin TDSON BSC100N06LS3GATMA1
- RS Stock No.:
- 754-5298
- Mfr. Part No.:
- BSC100N06LS3GATMA1
- Brand:
- Infineon
Subtotal (1 pack of 5 units)*
£2.44
(exc. VAT)
£2.93
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 45 unit(s) ready to ship
- Plus 15 unit(s) ready to ship from another location
- Plus 5,015 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.488 | £2.44 |
*price indicative
- RS Stock No.:
- 754-5298
- Mfr. Part No.:
- BSC100N06LS3GATMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TDSON | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 17.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 34 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 5.35mm | |
| Width | 6.1mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TDSON | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 17.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 34 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 5.35mm | ||
Width 6.1mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
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