N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 Vishay SIB406EDK-T1-GE3

RS Stock No.:: 814-1247
Mfr. Part No.:: SIB406EDK-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 Vishay SIB406EDK-T1-GE3

Available to back order for despatch 13/08/2025

Estimated Total Price (20 Units)

£7.82

(exc. VAT)

£9.38

(inc. VAT)

Units	Per unit	Per Pack*
20 - 180	£0.391	£7.82
200 - 480	£0.301	£6.02
500 - 980	£0.274	£5.48
1000 - 1980	£0.235	£4.70
2000 +	£0.211	£4.22
*price indicative

RS Stock No.:: 814-1247
Mfr. Part No.:: SIB406EDK-T1-GE3
Brand:: Vishay

SiB406EDK, N-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

RS Stock No.:: 814-1247
Mfr. Part No.:: SIB406EDK-T1-GE3
Brand:: Vishay

SiB406EDK, N-Channel 20V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.1 A
Maximum Drain Source Voltage	20 V
Package Type	SC-75
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	63 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	10 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Width	1.7mm
Transistor Material	Si
Number of Elements per Chip	1
Length	1.7mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	7.5 nC @ 10 V
Height	0.8mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.1 A
Maximum Drain Source Voltage	20 V
Package Type	SC-75
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	63 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.6V
Maximum Power Dissipation	10 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-12 V, +12 V
Width	1.7mm
Transistor Material	Si
Number of Elements per Chip	1
Length	1.7mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	7.5 nC @ 10 V
Height	0.8mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 5.1 A, 20 V, 6-Pin SC-75 Vishay SIB406EDK-T1-GE3

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