N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

Available to back order for despatch 12/11/2025

Added

Price Each (In a Pack of 20)

£0.552

(exc. VAT)

£0.662

(inc. VAT)

Units	Per unit	Per Pack*
20 - 180	£0.552	£11.04
200 - 480	£0.453	£9.06
500 - 980	£0.414	£8.28
1000 - 1980	£0.386	£7.72
2000 +	£0.331	£6.62
*price indicative

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Brand:: Vishay

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	100 V
Series	ThunderFET
Package Type	PowerPAK SC-70
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Length	2.15mm
Width	2.15mm
Transistor Material	Si
Number of Elements per Chip	1
Height	0.75mm
Minimum Operating Temperature	-55 °C

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

Technical Reference

Legislation and Compliance

Product Details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

Specifications

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

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