Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SC-89-6 Vishay SI1034CX-T1-GE3

RS Stock No.:: 180-7262
Mfr. Part No.:: SI1034CX-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SC-89-6 Vishay SI1034CX-T1-GE3

6000 In stock - FREE next working day delivery available

Added

Price Each (On a Reel of 3000)

£0.088

(exc. VAT)

£0.106

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.088	£264.00
*price indicative

RS Stock No.:: 180-7262
Mfr. Part No.:: SI1034CX-T1-GE3
Brand:: Vishay

Technical Reference

Datasheet

Legislation and Compliance

Product Details

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications

• Battery powered devices
• Drivers: relays, solenoids, lamps, hammers, displays, memories
• Load/power switching for portable devices
• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	500 mA
Maximum Drain Source Voltage	20 V
Package Type	SC-89-6
Series	TrenchFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	0.396 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Number of Elements per Chip	2

RS Stock No.:: 180-7262
Mfr. Part No.:: SI1034CX-T1-GE3
Brand:: Vishay

Datasheet