Vishay TrenchFET Dual N-Channel MOSFET, 19.8 A, 20 V, 8-Pin SO-8 SI4204DY-T1-GE3

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Subtotal (1 pack of 5 units)*

£8.81

(exc. VAT)

£10.57

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45£1.762£8.81
50 - 120£1.496£7.48
125 - 245£1.32£6.60
250 - 495£1.144£5.72
500 +£1.056£5.28

*price indicative

Packaging Options:
RS Stock No.:
180-8014
Mfr. Part No.:
SI4204DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19.8 A

Maximum Drain Source Voltage

20 V

Package Type

SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.006 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• DC/DC Converter
• Fixed Telecommunication
• Notebook PC

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested

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