Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 20 V, 8-Pin 1206 ChipFET SI5515CDC-T1-GE3

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Subtotal (1 reel of 3000 units)*

£777.00

(exc. VAT)

£933.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.259£777.00

*price indicative

RS Stock No.:
180-7304
Mfr. Part No.:
SI5515CDC-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

1206 ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.05 O,0.156 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Number of Elements per Chip

2

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V and drain-source resistance of 36mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 3.1W. The MOSFET has a continuous drain current of 4A. It has application in load switches for portable devices. MOSFET has been optimized, for lower switching and conduction losses.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested

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