Vishay TrenchFET Dual N/P-Channel MOSFET, 3.9 A, 2.1 A, 20 V, 6-Pin TSOP-6 SI3585CDV-T1-GE3

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Subtotal (1 pack of 20 units)*

£7.32

(exc. VAT)

£8.78

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 180£0.366£7.32
200 - 480£0.359£7.18
500 - 980£0.275£5.50
1000 - 1980£0.216£4.32
2000 +£0.173£3.46

*price indicative

Packaging Options:
RS Stock No.:
180-7911
Mfr. Part No.:
SI3585CDV-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3.9 A, 2.1 A

Maximum Drain Source Voltage

20 V

Package Type

TSOP-6

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.058 O,0.195 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

2

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source voltage of 20V. The MOSFET has a drain-source resistance of 58mohm at a gate-source voltage of 4.5V. It has continuous drain currents of 3.9A and 2.1A. It has a maximum power rating of 1.4W and 1.3W. It has been optimized, for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• DC/DC converters
• Drivers: motor, solenoid, relay
• Load switch for portable devices

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

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