Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 4 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 Dual

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Subtotal (1 pack of 10 units)*

£8.08

(exc. VAT)

£9.70

(inc. VAT)

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Temporarily out of stock
  • 5,920 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Pack*
10 - 90£0.808£8.08
100 - 240£0.759£7.59
250 - 490£0.686£6.86
500 - 990£0.646£6.46
1000 +£0.606£6.06

*price indicative

Packaging Options:
RS Stock No.:
228-2925
Mfr. Part No.:
SiS590DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.251Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

4.5nC

Maximum Power Dissipation Pd

23.1W

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Combo N- & P-Channel -100 V MOSFET.

100 % Rg and UIS tested

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