P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SI7129DN-T1-GE3

RS Stock No.:: 165-6294
Mfr. Part No.:: SI7129DN-T1-GE3
Brand:: Vishay

P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SI7129DN-T1-GE3

6000 In stock - FREE next working day delivery available

Price Each (On a Reel of 3000)

£0.483

(exc. VAT)

£0.58

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.483	£1,449.00
*price indicative

RS Stock No.:: 165-6294
Mfr. Part No.:: SI7129DN-T1-GE3
Brand:: Vishay

Si7129DN, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

RS Stock No.:: 165-6294
Mfr. Part No.:: SI7129DN-T1-GE3
Brand:: Vishay

Si7129DN, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.15mm
Typical Gate Charge @ Vgs	47.5 nC @ 10 V
Number of Elements per Chip	1
Length	3.15mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1.07mm
Minimum Operating Temperature	-50 °C

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	20 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	52.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	3.15mm
Typical Gate Charge @ Vgs	47.5 nC @ 10 V
Number of Elements per Chip	1
Length	3.15mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1.07mm
Minimum Operating Temperature	-50 °C

P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SI7129DN-T1-GE3

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