Vishay TrenchFET Dual N-Channel MOSFET, 500 mA, 20 V, 6-Pin SC-89-6 SI1034CX-T1-GE3

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£7.25

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£8.70

(inc. VAT)

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Packaging Options:
RS Stock No.:
180-7879
Mfr. Part No.:
SI1034CX-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.396 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

2

Vishay MOSFET


The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Gate source ESD protected: 1000V
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• Battery powered devices
• Drivers: relays, solenoids, lamps, hammers, displays, memories
• Load/power switching for portable devices
• Power supply converter circuits

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

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