Vishay Si1012CR Type N-Channel MOSFET, 630 mA, 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3
- RS Stock No.:
- 787-9005
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 20 units)*
£4.30
(exc. VAT)
£5.16
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 17 May 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | £0.215 | £4.30 |
| 200 - 480 | £0.15 | £3.00 |
| 500 - 980 | £0.134 | £2.68 |
| 1000 - 1980 | £0.117 | £2.34 |
| 2000 + | £0.114 | £2.28 |
*price indicative
- RS Stock No.:
- 787-9005
- Mfr. Part No.:
- SI1012CR-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 630mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-75 | |
| Series | Si1012CR | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Maximum Power Dissipation Pd | 240mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.68mm | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 630mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-75 | ||
Series Si1012CR | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Maximum Power Dissipation Pd 240mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Length 1.68mm | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si1012CR Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75
- DiodesZetex DMG1012T-7 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-89
- DiodesZetex DMG1012T-7 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-89 DMG1012T-7
- Vishay TrenchFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75
- Vishay TrenchFET Type N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3
- DiodesZetex DMN2004K Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMN2004K-7
- DiodesZetex DMN2004K Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Isolated TrenchFET 2 Type P 700 mA 6-Pin SC-88