Toshiba SSM6 Dual P-Channel MOSFET, 1.2 A, 20 V, 6-Pin UF6 SSM6P54TU(TE85L,F)
- RS Stock No.:
- 695-4877
- Mfr. Part No.:
- SSM6P54TU(TE85L,F)
- Brand:
- Toshiba
Currently unavailable
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- RS Stock No.:
- 695-4877
- Mfr. Part No.:
- SSM6P54TU(TE85L,F)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | SSM6 | |
| Package Type | UF6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 228 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Typical Gate Charge @ Vgs | 7.7 nC @ 4 V | |
| Length | 2mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Series SSM6 | ||
Package Type UF6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 228 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.7mm | ||
Typical Gate Charge @ Vgs 7.7 nC @ 4 V | ||
Length 2mm | ||
Maximum Operating Temperature +150 °C | ||
Height 0.7mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP
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