Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP-6 Infineon BSL308PEH6327XTSA1

RS Stock No.:: 892-2172
Mfr. Part No.:: BSL308PEH6327XTSA1
Brand:: Infineon

Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP-6 Infineon BSL308PEH6327XTSA1

Available to back order for despatch 02/12/2024

Price Each (In a Pack of 40)

£0.416

(exc. VAT)

£0.499

(inc. VAT)

Units	Per unit	Per Pack*
40 - 160	£0.416	£16.64
200 - 360	£0.395	£15.80
400 - 960	£0.379	£15.16
1000 - 1960	£0.362	£14.48
2000 +	£0.337	£13.48

*price indicative

RS Stock No.:: 892-2172
Mfr. Part No.:: BSL308PEH6327XTSA1
Brand:: Infineon

Technical Reference

Legislation and Compliance

Product Details

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	2 A
Maximum Drain Source Voltage	30 V
Package Type	TSOP-6
Series	OptiMOS P
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	500 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	5 nC @ 10 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Width	1.6mm
Number of Elements per Chip	2
Height	1mm
Forward Diode Voltage	1.1V
Minimum Operating Temperature	-55 °C