Infineon OptiMOS P Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP-6 BSL308PEH6327XTSA1
- RS Stock No.:
- 165-5552
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£558.00
(exc. VAT)
£669.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.186 | £558.00 |
| 6000 + | £0.177 | £531.00 |
*price indicative
- RS Stock No.:
- 165-5552
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | OptiMOS P | |
| Package Type | TSOP-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Width | 1.6mm | |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V | |
| Length | 2.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 2 A | ||
Maximum Drain Source Voltage 30 V | ||
Series OptiMOS P | ||
Package Type TSOP-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Width 1.6mm | ||
Typical Gate Charge @ Vgs 5 nC @ 10 V | ||
Length 2.9mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Forward Diode Voltage 1.1V | ||
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