Dual P-Channel MOSFET, 2 A, 30 V, 6-Pin TSOP-6 Infineon BSL308PEH6327XTSA1
- RS Stock No.:
- 165-5552
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 02/12/2024
Price Each (On a Reel of 3000)
£0.186
(exc. VAT)
£0.223
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.186 | £558.00 |
| 6000 + | £0.177 | £531.00 |
*price indicative
- RS Stock No.:
- 165-5552
- Mfr. Part No.:
- BSL308PEH6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Voltage | 30 V |
| Series | OptiMOS P |
| Package Type | TSOP-6 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Length | 2.9mm |
| Width | 1.6mm |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 5 nC @ 10 V |
| Forward Diode Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |
| Height | 1mm |
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