Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1

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Subtotal (1 reel of 3000 units)*

£240.00

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£300.00

(inc. VAT)

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3000 - 3000£0.08£240.00
6000 - 6000£0.076£228.00
9000 +£0.071£213.00

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RS Stock No.:
165-5872
Mfr. Part No.:
BSD235NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

950 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Series

OptiMOS™ 2

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

500 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

2

Width

1.25mm

Length

2mm

Typical Gate Charge @ Vgs

0.32 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Infineon OptiMOS™2 Power MOSFET Family


Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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