Infineon OptiMOS™ 2 Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 BSD235NH6327XTSA1
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£240.00
(exc. VAT)
£300.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.08 | £240.00 |
| 6000 - 6000 | £0.076 | £228.00 |
| 9000 + | £0.071 | £213.00 |
*price indicative
- RS Stock No.:
- 165-5872
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 950 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-363 | |
| Series | OptiMOS™ 2 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 2 | |
| Width | 1.25mm | |
| Length | 2mm | |
| Typical Gate Charge @ Vgs | 0.32 nC @ 4.5 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 950 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-363 | ||
Series OptiMOS™ 2 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 2 | ||
Width 1.25mm | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 0.32 nC @ 4.5 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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