- RS Stock No.:
- 827-0002
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 18/09/2025
Added
Price Each (On a Reel of 500)
£0.101
(exc. VAT)
£0.121
(inc. VAT)
Units | Per unit | Per Reel* |
500 - 500 | £0.101 | £50.50 |
1000 - 2000 | £0.096 | £48.00 |
2500 - 4500 | £0.086 | £43.00 |
5000 + | £0.086 | £43.00 |
*price indicative |
- RS Stock No.:
- 827-0002
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 300 mA |
Maximum Drain Source Voltage | 60 V |
Package Type | SOT-363 |
Series | OptiMOS |
Mounting Type | Surface Mount |
Pin Count | 6 |
Maximum Drain Source Resistance | 4 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 2.5V |
Minimum Gate Threshold Voltage | 1.5V |
Maximum Power Dissipation | 500 mW |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 2mm |
Number of Elements per Chip | 2 |
Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Width | 1.25mm |
Height | 0.8mm |
Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 827-0002
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Brand:
- Infineon
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