Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 Infineon BSD235NH6327XTSA1
- RS Stock No.:
- 827-0115
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Brand:
- Infineon
8750 In stock - FREE next working day delivery available
Price Each (On a Reel of 250)
£0.161
(exc. VAT)
£0.193
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 250 | £0.161 | £40.25 |
| 500 - 1000 | £0.093 | £23.25 |
| 1250 - 2250 | £0.087 | £21.75 |
| 2500 - 6000 | £0.082 | £20.50 |
| 6250 + | £0.076 | £19.00 |
*price indicative
- RS Stock No.:
- 827-0115
- Mfr. Part No.:
- BSD235NH6327XTSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 950 mA |
| Maximum Drain Source Voltage | 20 V |
| Series | OptiMOS™ 2 |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.2V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Width | 1.25mm |
| Length | 2mm |
| Typical Gate Charge @ Vgs | 0.32 nC @ 4.5 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Height | 0.8mm |
| Minimum Operating Temperature | -55 °C |
Related links
- Dual N-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363 Infineon...
- Dual N/P-Channel-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-363...
- P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 onsemi NTZS3151PT1G
- Plastic N-Channel MOSFET, 950 mA, 20 V, 3-Pin SOT-323 Diodes Inc...
- Dual P-Channel MOSFET, 390 mA, 20 V, 6-Pin SOT-363 Infineon...
- Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 Infineon...
- P-Channel MOSFET, 150 mA, 20 V, 6-Pin SOT-363 Infineon BSV236SPH6327XTSA1
- N-Channel MOSFET, 950 mA, 25 V, 6-Pin SOT-363 (SC-70) onsemi FDG313N