Infineon OptiMOS™ Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 2N7002DWH6327XTSA1
- RS Stock No.:
- 145-9487
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 3000 units)*
£129.00
(exc. VAT)
£156.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 15,000 unit(s) shipping from 27 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | £0.043 | £129.00 |
| 6000 - 12000 | £0.041 | £123.00 |
| 15000 + | £0.039 | £117.00 |
*price indicative
- RS Stock No.:
- 145-9487
- Mfr. Part No.:
- 2N7002DWH6327XTSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-363 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 2mm | |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 1.25mm | |
| Number of Elements per Chip | 2 | |
| Height | 0.8mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-363 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2mm | ||
Typical Gate Charge @ Vgs 0.4 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 1.25mm | ||
Number of Elements per Chip 2 | ||
Height 0.8mm | ||
Minimum Operating Temperature -55 °C | ||
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