Toshiba N-Channel MOSFET, 4.2 A, 20 V, 6-Pin UF6 SSM6K403TU
- RS Stock No.:
- 171-2405
- Mfr. Part No.:
- SSM6K403TU
- Brand:
- Toshiba
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-2405
- Mfr. Part No.:
- SSM6K403TU
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 4.2 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | UF6 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 66 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 1V | |
Minimum Gate Threshold Voltage | 0.35V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±10 V | |
Number of Elements per Chip | 1 | |
Length | 1.7mm | |
Width | 2mm | |
Typical Gate Charge @ Vgs | 16.8 nC @ 4 V | |
Maximum Operating Temperature | +150 °C | |
Height | 0.7mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type UF6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 66 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 0.35V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Number of Elements per Chip 1 | ||
Length 1.7mm | ||
Width 2mm | ||
Typical Gate Charge @ Vgs 16.8 nC @ 4 V | ||
Maximum Operating Temperature +150 °C | ||
Height 0.7mm | ||
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