Toshiba SSM6K403TU Type N-Channel Field Effect Transistor, 4.2 A, 20 V Enhancement, 6-Pin UF6
- RS Stock No.:
- 171-2405
- Mfr. Part No.:
- SSM6K403TU
- Brand:
- Toshiba
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 171-2405
- Mfr. Part No.:
- SSM6K403TU
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | Field Effect Transistor | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UF6 | |
| Series | SSM6K403TU | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type Field Effect Transistor | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UF6 | ||
Series SSM6K403TU | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
1.5V drive
Low ON-resistance: Ron = 66mΩ (max) (@VGS = 1.5V)
Ron = 43mΩ (max) (@VGS = 1.8V)
Ron = 32mΩ (max) (@VGS = 2.5V)
Ron = 28mΩ (max) (@VGS = 4.0V)
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