Infineon HEXFET N-Channel MOSFET, 78 A, 150 V, 3-Pin TO-247AC IRFP4321PBF
- RS Stock No.:
- 688-7005
- Mfr. Part No.:
- IRFP4321PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.57
(exc. VAT)
£5.484
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 26 unit(s) ready to ship
- Plus 2,908 unit(s) shipping from 08 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.285 | £4.57 |
| 20 - 48 | £2.055 | £4.11 |
| 50 - 98 | £1.92 | £3.84 |
| 100 - 198 | £1.78 | £3.56 |
| 200 + | £1.645 | £3.29 |
*price indicative
- RS Stock No.:
- 688-7005
- Mfr. Part No.:
- IRFP4321PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 78 A | |
| Maximum Drain Source Voltage | 150 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 16 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Width | 5.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 15.9mm | |
| Typical Gate Charge @ Vgs | 71 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.3mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 78 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 16 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Width 5.3mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 15.9mm | ||
Typical Gate Charge @ Vgs 71 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.3mm | ||
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