Infineon HEXFET N-Channel MOSFET, 81 A, 55 V, 3-Pin TO-247AC IRFP054NPBF

RS Stock No.:: 919-4892
Mfr. Part No.:: IRFP054NPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 81 A, 55 V, 3-Pin TO-247AC IRFP054NPBF

Bulk discount available

Subtotal (1 tube of 25 units)*

£47.375

(exc. VAT)

£56.85

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Tube*
25 - 25	£1.895	£47.38
50 - 100	£1.80	£45.00
125 - 225	£1.725	£43.13
250 - 600	£1.649	£41.23
625 +	£1.535	£38.38

*price indicative

RS Stock No.:: 919-4892
Mfr. Part No.:: IRFP054NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	81 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	12 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	170 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	130 nC @ 10 V
	Length	15.9mm
	Maximum Operating Temperature	+175 °C
	Width	5.3mm
	Height	20.3mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 81 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 12 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 170 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 130 nC @ 10 V
	Length 15.9mm
	Maximum Operating Temperature +175 °C
	Width 5.3mm
	Height 20.3mm
	Minimum Operating Temperature -55 °C

COO (Country of Origin):: MX

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF

This MOSFET provides a robust solution for high-speed performance and efficient power management. With its N-channel configuration, the device ensures dependable operation across various electronic circuits. It accommodates continuous drain currents up to 81A and has a voltage rating of 55V, making it a notable choice for professionals in the automation, electronics, and mechanical sectors.

Features & Benefits

• Maximum continuous drain current of 81A supports high-performance applications
• Low on-resistance of 12mΩ contributes to improved efficiency
• Wide gate threshold voltage range allows for versatile circuit designs
• High power dissipation capability of 170W ensures long-lasting operation
• Compact TO-247AC package simplifies installation

Applications

• Used in power conversion and motor control systems
• Integral to power supply and amplifier circuits
• Applicable in renewable energy systems for efficient switching
• Suitable for automotive , enhancing performance resilience

What is the maximum power dissipation capability of this device?

The maximum power dissipation is rated at 170W, allowing it to manage substantial loads effectively.

How does the gate threshold voltage affect operation?

The gate threshold voltage ranges from 2V to 4V, which enables compatibility with various circuit designs and ensures efficient operation within specified parameters.

Can this MOSFET be used in high-temperature environments?

Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for challenging thermal conditions.

What are the benefits of using a low RDS(on)?

A low RDS(on) of 12mΩ reduces heat generation and enhances efficiency, critical for high-performance applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.