Infineon HEXFET N-Channel MOSFET, 81 A, 55 V, 3-Pin TO-247AC IRFP054NPBF

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RS Stock No.:
919-4892
Mfr. Part No.:
IRFP054NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

81 A

Maximum Drain Source Voltage

55 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

5.3mm

Length

15.9mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

20.3mm

COO (Country of Origin):
MX

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF


This MOSFET provides a robust solution for high-speed performance and efficient power management. With its N-channel configuration, the device ensures dependable operation across various electronic circuits. It accommodates continuous drain currents up to 81A and has a voltage rating of 55V, making it a notable choice for professionals in the automation, electronics, and mechanical sectors.

Features & Benefits


• Maximum continuous drain current of 81A supports high-performance applications
• Low on-resistance of 12mΩ contributes to improved efficiency
• Wide gate threshold voltage range allows for versatile circuit designs
• High power dissipation capability of 170W ensures long-lasting operation
• Compact TO-247AC package simplifies installation

Applications


• Used in power conversion and motor control systems
• Integral to power supply and amplifier circuits
• Applicable in renewable energy systems for efficient switching
• Suitable for automotive , enhancing performance resilience

What is the maximum power dissipation capability of this device?


The maximum power dissipation is rated at 170W, allowing it to manage substantial loads effectively.

How does the gate threshold voltage affect operation?


The gate threshold voltage ranges from 2V to 4V, which enables compatibility with various circuit designs and ensures efficient operation within specified parameters.

Can this MOSFET be used in high-temperature environments?


Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for challenging thermal conditions.

What are the benefits of using a low RDS(on)?


A low RDS(on) of 12mΩ reduces heat generation and enhances efficiency, critical for high-performance applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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