Infineon HEXFET Type N-Channel MOSFET, 81 A, 20 V Enhancement, 2-Pin DirectFET IRF6636TRPBF
- RS Stock No.:
- 222-4739
- Mfr. Part No.:
- IRF6636TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.45
(exc. VAT)
£16.14
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.345 | £13.45 |
| 50 - 90 | £1.278 | £12.78 |
| 100 - 240 | £1.224 | £12.24 |
| 250 - 490 | £1.17 | £11.70 |
| 500 + | £1.089 | £10.89 |
*price indicative
- RS Stock No.:
- 222-4739
- Mfr. Part No.:
- IRF6636TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 6.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Width | 3.95 mm | |
| Length | 4.85mm | |
| Height | 0.68mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 6.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Width 3.95 mm | ||
Length 4.85mm | ||
Height 0.68mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
Related links
- Infineon HEXFET Silicon N-Channel MOSFET 20 V DirectFET ISOMETRIC IRF6636TRPBF
- Infineon HEXFET Silicon N-Channel MOSFET 20 V DirectFET ISOMETRIC IRF6620TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V DirectFET ISOMETRIC AUIRL7736M2TR
- Infineon HEXFET N-Channel MOSFET 150 V DirectFET ISOMETRIC IRF6775MTRPBF
- Infineon HEXFET N-Channel MOSFET 150 V DirectFET ISOMETRIC AUIRF7675M2TR
- Infineon HEXFET N-Channel MOSFET 60 V, 9-Pin DirectFET ISOMETRIC AUIRF7648M2TR
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-247AC IRFP054NPBF
- Infineon DirectFET 375 A, 60 V DirectFET ISOMETRIC IRF7749L1TRPBF