MPN

Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET

RS Stock No.:: 218-3101
Mfr. Part No.:: IRF6775MTRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET

Subtotal (1 reel of 4800 units)*

£2,764.80

(exc. VAT)

£3,316.80

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 11 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
4800 +	£0.576	£2,764.80

*price indicative

RS Stock No.:: 218-3101
Mfr. Part No.:: IRF6775MTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	150V
	Package Type	DirectFET
	Series	HEXFET
	Mount Type	Surface
	Pin Count	2
	Maximum Drain Source Resistance Rds	56mΩ
	Maximum Power Dissipation Pd	89W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	1.3V
	Height	0.68mm
	Length	4.85mm
	Standards/Approvals	No
	Width	3.95 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 150V
	Package Type DirectFET
	Series HEXFET
	Mount Type Surface
	Pin Count 2
	Maximum Drain Source Resistance Rds 56mΩ
	Maximum Power Dissipation Pd 89W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf 1.3V
	Height 0.68mm
	Length 4.85mm
	Standards/Approvals No
	Width 3.95 mm
	Automotive Standard No

Datasheet - IRF6775MTRPBF

The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.

Latest MOSFET Silicon technology

Dual sided cooling compatible

Compatible with existing surface mount technologies

Lead-Free