Infineon HEXFET N-Channel MOSFET, 112 A, 40 V DirectFET ISOMETRIC AUIRL7736M2TR

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Subtotal (1 reel of 4800 units)*

£5,068.80

(exc. VAT)

£6,081.60

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +£1.056£5,068.80

*price indicative

RS Stock No.:
214-8964
Mfr. Part No.:
AUIRL7736M2TR
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.003 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology
Logic Level
High Power Density

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