Infineon HEXFET N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC IRF6785MTRPBF

Subtotal (1 pack of 10 units)*

£14.56

(exc. VAT)

£17.47

(inc. VAT)

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10 +£1.456£14.56

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Packaging Options:
RS Stock No.:
215-2581
Mfr. Part No.:
IRF6785MTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

200 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging.

Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier applications
Dual sided cooling compatible
Lead-Free (Qualified up to 260°C Reflow)

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