Infineon HEXFET N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF

Subtotal (1 reel of 4800 units)*

£3,331.20

(exc. VAT)

£3,998.40

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +£0.694£3,331.20

*price indicative

RS Stock No.:
215-2577
Mfr. Part No.:
IRF6668TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity

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