Infineon HEXFET N-Channel MOSFET, 112 A, 40 V DirectFET ISOMETRIC AUIRL7736M2TR

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Subtotal (1 pack of 5 units)*

£15.15

(exc. VAT)

£18.20

(inc. VAT)

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Per unit
Per Pack*
5 - 20£3.03£15.15
25 - 45£2.606£13.03
50 - 120£2.454£12.27
125 - 245£2.272£11.36
250 +£2.122£10.61

*price indicative

Packaging Options:
RS Stock No.:
214-8965
Mfr. Part No.:
AUIRL7736M2TR
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

40 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Maximum Drain Source Resistance

0.003 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced packaging platform to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques etc. The package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Advanced Process Technology
Logic Level
High Power Density

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