Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF
- RS Stock No.:
- 222-4738
- Mfr. Part No.:
- IRF6636TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 4800 units)*
£3,729.60
(exc. VAT)
£4,473.60
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
4800 + | £0.777 | £3,729.60 |
*price indicative
- RS Stock No.:
- 222-4738
- Mfr. Part No.:
- IRF6636TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 81 A | |
Maximum Drain Source Voltage | 20 V | |
Package Type | DirectFET ISOMETRIC | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Maximum Drain Source Resistance | 0.0064 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.45V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 81 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DirectFET ISOMETRIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Maximum Drain Source Resistance 0.0064 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.45V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
100% Rg tested Low Conduction and Switching Losses
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters
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