Infineon HEXFET N-Channel MOSFET, 81 A, 55 V, 3-Pin TO-247AC IRFP054NPBF
- RS Stock No.:
- 541-1253
- Mfr. Part No.:
- IRFP054NPBF
- Brand:
- Infineon
Subtotal (1 unit)*
£2.21
(exc. VAT)
£2.65
(inc. VAT)
Units | Per unit |
|---|---|
| 1 - 9 | £2.21 |
| 10 - 24 | £2.10 |
| 25 - 49 | £2.01 |
| 50 - 99 | £1.92 |
| 100 + | £1.79 |
*price indicative
- RS Stock No.:
- 541-1253
- Mfr. Part No.:
- IRFP054NPBF
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 81 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 170 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.3mm | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 15.9mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 20.3mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 81 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.3mm | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Transistor Material Si | ||
Length 15.9mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 20.3mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF
Features & Benefits
• Low on-resistance of 12mΩ contributes to improved efficiency
• Wide gate threshold voltage range allows for versatile circuit designs
• High power dissipation capability of 170W ensures long-lasting operation
• Compact TO-247AC package simplifies installation
Applications
• Integral to power supply and amplifier circuits
• Applicable in renewable energy systems for efficient switching
• Suitable for automotive , enhancing performance resilience
What is the maximum power dissipation capability of this device?
How does the gate threshold voltage affect operation?
Can this MOSFET be used in high-temperature environments?
What are the benefits of using a low RDS(on)?
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