Infineon HEXFET N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.75
(exc. VAT)
£10.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 20 unit(s) shipping from 03 November 2025
- Plus 180 unit(s) shipping from 10 November 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.75 | £8.75 |
| 25 - 45 | £1.594 | £7.97 |
| 50 - 120 | £1.488 | £7.44 |
| 125 - 245 | £1.382 | £6.91 |
| 250 + | £1.278 | £6.39 |
*price indicative
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Length | 15.29mm | |
| Width | 19.71mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.31mm | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Length 15.29mm | ||
Width 19.71mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 5.31mm | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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