Infineon HEXFET N-Channel MOSFET, 160 A, 55 V, 3-Pin TO-247 IRFP1405PBF
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.75
(exc. VAT)
£10.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20 unit(s) ready to ship
- Plus 230 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.75 | £8.75 |
| 25 - 45 | £1.594 | £7.97 |
| 50 - 120 | £1.488 | £7.44 |
| 125 - 245 | £1.382 | £6.91 |
| 250 + | £1.278 | £6.39 |
*price indicative
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 160 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 310 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Length | 15.29mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Width | 19.71mm | |
| Forward Diode Voltage | 1.3V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 5.31mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 160 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 310 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Length 15.29mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Width 19.71mm | ||
Forward Diode Voltage 1.3V | ||
Minimum Operating Temperature -55 °C | ||
Height 5.31mm | ||
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