Infineon OptiMOS™ N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 BSP603S2LHUMA1
- RS Stock No.:
- 462-2935
- Mfr. Part No.:
- BSP603S2LHUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£12.33
(exc. VAT)
£14.80
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- 130 left, ready to ship
- Plus 90 left, ready to ship from another location
- Final 3,480 unit(s) shipping from 07 November 2025
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.233 | £12.33 |
| 50 - 90 | £1.171 | £11.71 |
| 100 - 240 | £1.054 | £10.54 |
| 250 - 490 | £0.949 | £9.49 |
| 500 + | £0.903 | £9.03 |
*price indicative
- RS Stock No.:
- 462-2935
- Mfr. Part No.:
- BSP603S2LHUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.2 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-223 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.5mm | |
| Transistor Material | Si | |
| Width | 3.5mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.6mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.2 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.5mm | ||
Transistor Material Si | ||
Width 3.5mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Height 1.6mm | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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