Infineon OptiMOS™ N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Number of Elements per Chip

1

Length

6.5mm

Width

3.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.6mm