N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

RS Stock No.:: 911-4820
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

4000 In stock - FREE next working day delivery available

Price Each (On a Reel of 4000)

£0.661

(exc. VAT)

£0.793

(inc. VAT)

Units	Per unit	Per Reel*
4000 +	£0.661	£2,644.00
*price indicative

RS Stock No.:: 911-4820
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 911-4820
Mfr. Part No.:: BSP603S2LHUMA1
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	55 V
Series	OptiMOS™
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	31 nC @ 10 V
Length	6.5mm
Width	3.5mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1.6mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.2 A
Maximum Drain Source Voltage	55 V
Series	OptiMOS™
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	31 nC @ 10 V
Length	6.5mm
Width	3.5mm
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 Infineon BSP603S2LHUMA1

Infineon OptiMOS™ Power MOSFET Family

Infineon OptiMOS™ Power MOSFET Family

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