Infineon OptiMOS™ N-Channel MOSFET, 5.2 A, 55 V, 3-Pin SOT-223 BSP603S2LHUMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.5mm

Minimum Operating Temperature

-55 °C

Height

1.6mm