Infineon OptiMOS™ N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

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Subtotal (1 reel of 3000 units)*

£123.00

(exc. VAT)

£147.00

(inc. VAT)

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RS Stock No.:
178-7474
Mfr. Part No.:
BSS670S2LH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-23

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

825 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Transistor Material

Si

Length

2.9mm

Width

1.3mm

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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