Nexperia BSH111BK N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 BSH111BKR

View all MOSFETs

Subtotal (1 reel of 3000 units)*

£93.00

(exc. VAT)

£111.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 12,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +£0.031£93.00

*price indicative

RS Stock No.:
170-4850
Mfr. Part No.:
BSH111BKR
Brand:
Nexperia
Find similar products by selecting one or more attributes.
Select all

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

335 mA

Maximum Drain Source Voltage

55 V

Series

BSH111BK

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3mm

Width

1.4mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
CN
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

Related links