Nexperia BSH111BK N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 BSH111BKR
- RS Stock No.:
- 170-4850
- Mfr. Part No.:
- BSH111BKR
- Brand:
- Nexperia
Subtotal (1 reel of 3000 units)*
£93.00
(exc. VAT)
£111.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 6,000 unit(s) shipping from 27 October 2025
- Plus 999,993,000 unit(s) shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.031 | £93.00 |
*price indicative
- RS Stock No.:
- 170-4850
- Mfr. Part No.:
- BSH111BKR
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 335 mA | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-236 | |
| Series | BSH111BK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.4mm | |
| Typical Gate Charge @ Vgs | 0.5 nC @ 4.5 V | |
| Length | 3mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 335 mA | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-236 | ||
Series BSH111BK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1.45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Typical Gate Charge @ Vgs 0.5 nC @ 4.5 V | ||
Length 3mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
- COO (Country of Origin):
- CN
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
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