Infineon OptiMOS™ N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- RS Stock No.:
- 827-0027
- Mfr. Part No.:
- BSS670S2LH6327XTSA1
- Brand:
- Infineon
Subtotal (1 reel of 250 units)*
£34.75
(exc. VAT)
£41.75
(inc. VAT)
FREE delivery for orders over £50.00
- 10,500 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
250 - 250 | £0.139 | £34.75 |
500 - 1000 | £0.071 | £17.75 |
1250 - 2250 | £0.067 | £16.75 |
2500 - 6000 | £0.061 | £15.25 |
6250 + | £0.057 | £14.25 |
*price indicative
- RS Stock No.:
- 827-0027
- Mfr. Part No.:
- BSS670S2LH6327XTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 540 mA | |
Maximum Drain Source Voltage | 55 V | |
Package Type | SOT-23 | |
Series | OptiMOS™ | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 825 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1.2V | |
Maximum Power Dissipation | 360 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 1.7 nC @ 10 V | |
Width | 1.3mm | |
Length | 2.9mm | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Height | 1mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 540 mA | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-23 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 825 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 1.7 nC @ 10 V | ||
Width 1.3mm | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™ Power MOSFET Family
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
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