Infineon OptiMOS™ N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1
- RS Stock No.:
- 827-0027
- Mfr. Part No.:
- BSS670S2LH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 250 units)*
£34.75
(exc. VAT)
£41.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 10,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 250 - 250 | £0.139 | £34.75 |
| 500 - 1000 | £0.071 | £17.75 |
| 1250 - 2250 | £0.067 | £16.75 |
| 2500 - 6000 | £0.061 | £15.25 |
| 6250 + | £0.057 | £14.25 |
*price indicative
- RS Stock No.:
- 827-0027
- Mfr. Part No.:
- BSS670S2LH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 540 mA | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOT-23 | |
| Series | OptiMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 825 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 360 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.7 nC @ 10 V | |
| Width | 1.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 540 mA | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-23 | ||
Series OptiMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 825 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.7 nC @ 10 V | ||
Width 1.3mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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