Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

Subtotal (1 reel of 3000 units)*

£126.00

(exc. VAT)

£150.00

(inc. VAT)

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3000 +£0.042£126.00

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RS Stock No.:
165-5862
Mfr. Part No.:
BSS123NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Series

OptiMOS™

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Number of Elements per Chip

1

Length

2.9mm

Height

1mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

COO (Country of Origin):
CN

Infineon OptiMOS™ Small Signal MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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