MPN

Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223

RS Stock No.:: 225-0556
Mfr. Part No.:: BSS123IXTSA1
Brand:: Infineon

Infineon BSS123I Type N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223

Bulk discount available

Subtotal (1 reel of 3000 units)*

£99.00

(exc. VAT)

£120.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

3,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 - 3000	£0.033	£99.00
6000 - 12000	£0.031	£93.00
15000 +	£0.03	£90.00

*price indicative

RS Stock No.:: 225-0556
Mfr. Part No.:: BSS123IXTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	190mA
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	BSS123I
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	10Ω
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	0.5W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	0.63nC
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.7mm
	Height	1.8mm
	Width	3.7 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 190mA
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series BSS123I
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 10Ω
	Channel Mode Depletion
	Maximum Power Dissipation Pd 0.5W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 0.63nC
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.7mm
	Height 1.8mm
	Width 3.7 mm
	Automotive Standard No

Datasheet-BSS123IXTSA1

The Infineon BSS123I is the small signal, small power N- and P-channel MOSFETs provide a wide range of VGS(th) levels and RDS(on) values, as well as multiple voltage classes. This MOSFET have enhancement and depletion-mode options.

PCB-space and cost savings

Gate drive flexibility

Reduced design complexity

Environmentally friendly

High overall efficiency