Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6327XTSA1

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Subtotal (1 reel of 500 units)*

£31.00

(exc. VAT)

£37.00

(inc. VAT)

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500 - 500£0.062£31.00
1000 - 2000£0.046£23.00
2500 - 4500£0.043£21.50
5000 - 12000£0.04£20.00
12500 +£0.037£18.50

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RS Stock No.:
827-0011
Mfr. Part No.:
BSS123NH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

190 mA

Maximum Drain Source Voltage

100 V

Series

OptiMOS™

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.3mm

Length

2.9mm

Typical Gate Charge @ Vgs

0.6 nC @ 10 V

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

RoHS Status: Not Applicable

Infineon OptiMOS™ Small Signal MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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