Infineon OptiMOS™ N-Channel MOSFET, 190 mA, 100 V, 3-Pin SOT-23 BSS123NH6433XTMA1
- RS Stock No.:
- 826-9317
- Mfr. Part No.:
- BSS123NH6433XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 reel of 500 units)*
£32.50
(exc. VAT)
£39.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | £0.065 | £32.50 |
| 1000 - 2000 | £0.044 | £22.00 |
| 2500 - 4500 | £0.04 | £20.00 |
| 5000 - 12000 | £0.038 | £19.00 |
| 12500 + | £0.035 | £17.50 |
*price indicative
- RS Stock No.:
- 826-9317
- Mfr. Part No.:
- BSS123NH6433XTMA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 190 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Series | OptiMOS™ | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 1.3mm | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Typical Gate Charge @ Vgs | 0.6 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 190 mA | ||
Maximum Drain Source Voltage 100 V | ||
Series OptiMOS™ | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.3mm | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Typical Gate Charge @ Vgs 0.6 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
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