Nexperia BSH111BK N-Channel MOSFET, 335 mA, 55 V, 3-Pin SOT-23 BSH111BKR

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Subtotal 100 units (supplied on a continuous strip)*

£4.90

(exc. VAT)

£5.90

(inc. VAT)

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100 +£0.049

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Packaging Options:
RS Stock No.:
170-5339P
Mfr. Part No.:
BSH111BKR
Brand:
Nexperia
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Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

335 mA

Maximum Drain Source Voltage

55 V

Package Type

TO-236

Series

BSH111BK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

1.45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

10 V

Number of Elements per Chip

1

Width

1.4mm

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

1mm

COO (Country of Origin):
CN
Logic- and Standard Level MOSFETs in a variety of packages. Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

Low threshold voltage
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 3 kV HBM
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

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