MPN

Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK

RS Stock No.:: 222-4917
Mfr. Part No.:: IPL65R070C7AUMA1
Brand:: Infineon

Infineon IPL60R Type N-Channel MOSFET, 28 A, 650 V Enhancement, 5-Pin ThinPAK

Subtotal (1 reel of 3000 units)*

£7,890.00

(exc. VAT)

£9,480.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 04 January 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£2.63	£7,890.00

*price indicative

RS Stock No.:: 222-4917
Mfr. Part No.:: IPL65R070C7AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	650V
	Package Type	ThinPAK
	Series	IPL60R
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	70mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	64nC
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	169W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.8V
	Maximum Operating Temperature	150°C
	Height	1.1mm
	Standards/Approvals	No
	Width	8.1 mm
	Length	8.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 650V
	Package Type ThinPAK
	Series IPL60R
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 70mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 64nC
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 169W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.8V
	Maximum Operating Temperature 150°C
	Height 1.1mm
	Standards/Approvals No
	Width 8.1 mm
	Length 8.1mm
	Automotive Standard No

Datasheet - IPL65R070C7AUMA1

The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Revolutionary best-in-class R DS(on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

12 years manufacturing experience in superjunction technology