Infineon CoolMOS™ C7 N-Channel MOSFET, 17 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R125C7AUMA1
- RS Stock No.:
- 222-4914
- Mfr. Part No.:
- IPL60R125C7AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.85
(exc. VAT)
£8.22
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 480 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.425 | £6.85 |
| 20 - 48 | £3.115 | £6.23 |
| 50 - 98 | £2.915 | £5.83 |
| 100 - 198 | £2.70 | £5.40 |
| 200 + | £2.495 | £4.99 |
*price indicative
- RS Stock No.:
- 222-4914
- Mfr. Part No.:
- IPL60R125C7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | ThinPAK 8 x 8 | |
| Series | CoolMOS™ C7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 120 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type ThinPAK 8 x 8 | ||
Series CoolMOS™ C7 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 120 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Related links
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