Infineon CoolMOS™ P7 N-Channel MOSFET, 19 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R185P7AUMA1
- RS Stock No.:
- 222-4916
- Mfr. Part No.:
- IPL60R185P7AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£11.20
(exc. VAT)
£13.45
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 09 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.24 | £11.20 |
| 25 - 45 | £1.792 | £8.96 |
| 50 - 120 | £1.658 | £8.29 |
| 125 - 245 | £1.546 | £7.73 |
| 250 + | £1.434 | £7.17 |
*price indicative
- RS Stock No.:
- 222-4916
- Mfr. Part No.:
- IPL60R185P7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | ThinPAK 8 x 8 | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 185 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type ThinPAK 8 x 8 | ||
Series CoolMOS™ P7 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 185 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
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