Infineon CoolMOS™ C7 N-Channel MOSFET, 28 A, 650 V, 5-Pin ThinPAK 8 x 8 IPL65R070C7AUMA1
- RS Stock No.:
- 222-4918
- Mfr. Part No.:
- IPL65R070C7AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£11.26
(exc. VAT)
£13.52
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 94 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £5.63 | £11.26 |
| 10 - 18 | £5.065 | £10.13 |
| 20 - 48 | £4.73 | £9.46 |
| 50 - 98 | £4.45 | £8.90 |
| 100 + | £4.11 | £8.22 |
*price indicative
- RS Stock No.:
- 222-4918
- Mfr. Part No.:
- IPL65R070C7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ C7 | |
| Package Type | ThinPAK 8 x 8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 70 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ C7 | ||
Package Type ThinPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
12 years manufacturing experience in superjunction technology
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
12 years manufacturing experience in superjunction technology
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